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CRC Press Strained-Si Heterostructure Field Effect Devices Book

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Description

Explore the advancements in semiconductor technology with Strained-Si Heterostructure Field Effect Devices from CRC Press. This professional resource covers the integration of materials science and manufacturing processes to explain how SiGe and strained-Si technology provides high performance at low manufacturing costs. This book is designed to meet the research needs of professionals working on the front-end aspects of extending CMOS technology through strain engineering. It provides a technical foundation for comparing current industry technologies with upcoming directions in silicon heterostructure CMOS. By bridging the gap between pioneering research and practical manufacturing, this text serves as a guide for understanding the evolution of high-performance field effect devices in modern electrical engineering.

Key Features

Covers the combination of materials science and manufacturing processes for SiGe and strained-Si technology.

Addresses research needs for extending CMOS technology via strain engineering methods.

Provides a technical basis to compare existing technologies with future silicon heterostructure CMOS directions.

Explains how to achieve high levels of performance enhancement while maintaining low manufacturing costs.

Serves as a comprehensive resource for the front-end aspects of semiconductor development.

Product Specifications

Format
hardcover
Domain
Amazon UK
Release Date
11 January 2007
Listed Since
10 February 2007

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