CRC Press Strained-Si Heterostructure Field Effect Devices Book

Explore the advancements in semiconductor technology with Strained-Si Heterostructure Field Effect Devices from CRC Press. This professional resource covers the integration of materials science and manufacturing processes to explain how SiGe and strained-Si technology provides high performance at low manufacturing costs. This book is designed to meet the research needs of professionals working on the front-end aspects of extending CMOS technology through strain engineering. It provides a technical foundation for comparing current industry technologies with upcoming directions in silicon heterostructure CMOS. By bridging the gap between pioneering research and practical manufacturing, this text serves as a guide for understanding the evolution of high-performance field effect devices in modern electrical engineering.