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CRC Press Strained-Si Heterostructure Field Effect Devices - Engineering

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Description

Strained-Si Heterostructure Field Effect Devices by CRC Press explores the materials science and manufacturing processes behind SiGe and strained-Si technologies that deliver high-performance enhancements at reduced costs. This comprehensive engineering reference addresses the research needs of front-end CMOS technology extension through strain engineering, providing engineers and researchers with a thorough comparison of existing silicon heterostructure technologies and future directions. The book combines theoretical foundations with practical insights into how strain engineering optimises semiconductor device performance, making it essential reading for professionals working on advanced silicon-based field effect devices and semiconductor manufacturing.

Key Features

Covers SiGe and strained-Si materials science, manufacturing processes, and pioneering research developments for semiconductor performance enhancement.

Addresses front-end CMOS technology extension through comprehensive strain engineering techniques and methodologies.

Provides detailed comparison of existing silicon heterostructure technologies with future technological directions in the field.

Published by CRC Press as part of the Series in Materials Science and Engineering for academic and professional audiences.

Product Specifications

Format
hardcover
Domain
Amazon UK
Release Date
11 January 2007
Listed Since
10 February 2007

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