We can't find the internet
Attempting to reconnect
Something went wrong
Hang in there while we get back on track
£113.77
This is the most expensive it has ever been. Walk away.
£114 today · previous high £114 · all-time low £108
Springer Recent Advances in PMOS Negative Bias Temperature Instability
We'll watch every seller, every day. One email when your price arrives.
Price History & Forecast
Grey patches = out of stock. Cheaper = lower on the chart. Hover for exact prices.
Last 80 days · 80 data points (no recent data)
NEW HERE?
Amazon shows you one price. We show you all of them.
Tosheroon watches Amazon prices so you don't have to. Every product on Amazon has a price history — we make it visible. Set the price you'd actually pay, and we'll email you the second it gets there. No app, no account, one email.
WHAT'S ON THIS PAGE
when this has been cheap or pricey
where the price is heading next
all-time high & low, recent range
name your number, we'll email you
Price Distribution
Price distribution over 80 days • 2 price levels
Price Analysis
Most common price: £108 (61 days, 76.3%)
Price range: £108 - £114
Price levels: 2 different prices over 80 days
Description
Key Features
Covers ultra-fast measurement techniques for accurate Negative Bias Temperature Instability characterisation in PMOS devices.
Presents physics-based models for reliable end-of-life degradation determination and NBTI prediction in CMOS transistors.
Examines process, material, and device architectural impacts on Negative Bias Temperature Instability performance.
Provides stress conditions and artefact-free measurement protocols essential for NBTI research and semiconductor reliability assessment.
Serves semiconductor researchers, professionals, and device engineers working with CMOS circuits and transistor reliability.
Product Specifications
- Brand
- Springer
- Format
- paperback
- ASIN
- 9811661227
- Domain
- Amazon UK
- Release Date
- 27 November 2022
- Listed Since
- 30 October 2022
Barcode
No barcode data available
Similar Products You Might Like
Recent Advances in PMOS Negative Bias Temperature Instability: Characterization and Modeling of Device Architecture, Material and Process Impact
Springer
Bias Temperature Instability for Devices and Circuits - Springer
Springer
MOSFET MODELING FOR VLSI SIMULATION: THEORY AND PRACTICE: 0 (INTERNATIONAL SERIES ON ADVANCES IN SOLID STATE ELECTRONICS AND TECHNOLOGY)
World Scientific Publishing Company
Matching Properties of Deep Sub-Micron MOS Transistors: 851 (The Springer International Series in Engineering and Computer Science, 851)
Springer
MOSFET MODELING FOR VLSI SIMULATION: THEORY AND PRACTICE: 0 (International Series On Advances In Solid State Electronics And Technology)
World Scientific Publishing Company
Advanced Ultra Low-Power Semiconductor Devices: Design and Applications
Wiley
Matching Properties of Deep Sub-Micron MOS Transistors: 851 (The Springer International Series in Engineering and Computer Science, 851)
Springer
Frontiers In Electronics: Advanced Modeling Of Nanoscale Electron Devices: 54 (SELECTED TOPICS IN ELECTRONICS AND SYSTEMS)
World Scientific Publishing Company
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction (Software Engineering; 4)
Springer
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction
Springer
Technology CAD ― Computer Simulation of IC Processes and Devices: 243 (The Springer International Series in Engineering and Computer Science, 243)
Springer
Technology CAD ― Computer Simulation of IC Processes and Devices: 243 (The Springer International Series in Engineering and Computer Science, 243)
Springer
Progress in SOI Structures and Devices Operating at Extreme Conditions: 58 (NATO Science Series II: Mathematics, Physics and Chemistry, 58)
Springer
MOSFET Modeling & BSIM3 User’s Guide
Springer
MOS Devices for Low-Voltage and Low-Energy Applications (IEEE Press)
Wiley
BSIM4 And Mosfet Modeling For IC Simulation: 0 (INTERNATIONAL SERIES ON ADVANCES IN SOLID STATE ELECTRONICS AND TECHNOLOGY)
World Scientific Publishing Company
Integrated Power Devices and TCAD Simulation (Devices, Circuits, and Systems)
CRC Press
Strain-Engineered MOSFETs
CRC Press
CRC Press Strain-Engineered MOSFETs Engineering Book
CRC Press
Progress in SOI Structures and Devices Operating at Extreme Conditions: 58 (NATO Science Series II: Mathematics, Physics and Chemistry, 58)
Springer
Strained-Si Heterostructure Field Effect Devices - Engineering
CRC Press
Compact Models for Integrated Circuit Design - SPICE CAD
CRC Press
Recent Advancement in Electronic Devices, Circuit and Materials
Operation and Modeling of the MOS Transistor
Oxford University Press