Applications of Silicon-Germanium Heterostructure Devices (Series in Optics and Optoelectronics) - Image 1

£239.58

CRC Press Applications of Silicon-Germanium Heterostructure Devices (Series in Optics and Optoelectronics)

Name: Applications of Silicon-Germanium Heterostructure Devices (Series in Optics and Optoelectronics)
Brand: CRC Press
Price: 239.58 GBP
Availability: InStock

Engineering Physics

This is the most expensive it has ever been. Walk away.

£240 today · previous high £240 · all-time low £239

NEW HERE?

Amazon shows you one price. We show you all of them.

Tosheroon watches Amazon prices so you don't have to. Every product on Amazon has a price history — we make it visible. Set the price you'd actually pay, and we'll email you the second it gets there. No app, no account, one email.

WHAT'S ON THIS PAGE

↓ Price chart
when this has been cheap or pricey

↓ Forecast
where the price is heading next

↓ Statistics
all-time high & low, recent range

↑ Price alert
name your number, we'll email you

Price History & Forecast

Grey patches = out of stock. Cheaper = lower on the chart. Hover for exact prices.

Last 47 days · 47 data points (no recent data)

Historical

Generating forecast…

Price Distribution

Price distribution over 47 days • 1 price levels

Days at Price

Price Analysis

Most common price: £240 (47 days, 100.0%)

Price range: £240 - £240

Price levels: 1 different prices over 47 days

Description

The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of strained layers, background theory of the HBT, how device simulation can be used to predict the optimum HBT device structure for a particular application such as cryogenics, compact SiGe-HBT models for RF applications and the SPICE parameter extraction, and strategies for the enhancement of the high-frequency performance of heterojunction field effect transistors (HFETs) using MOSFET or MODFET structures. The book also covers the design and application of optoelectronic devices and assesses how SiGe technology competes with other alternative technologies in the RF wireless communications marketplace.

Product Specifications

Brand: CRC Press
Format: hardcover
ASIN: 0750307234
Category: Books > Subjects > Science, Nature & Maths > Engineering & Technology > Engineering Physics
Domain: Amazon UK
Release Date: 20 July 2001
Listed Since: 22 January 2007

Barcode

No barcode data available

CRC Press Applications of Silicon-Germanium Heterostructure Devices (Series in Optics and Optoelectronics)

This is the most expensive it has ever been. Walk away.

Price History & Forecast

Price Distribution

Price Analysis

Description

Product Specifications

Barcode

Similar Products You Might Like

Fabrication of SiGe HBT BiCMOS Technology

Silicon-Germanium (SiGe) Nanostructures: Production, Properties and Applications in Electronics (Woodhead Publishing Series in Electronic and Optical Materials)

Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy

CRC Press Strained-Si Heterostructure Field Effect Devices Book

SiGe Heterojunction Bipolar Transistors

High-Speed Devices and Circuits with THz Applications: 30 (Devices, Circuits, and Systems)

III–V Compound Semiconductors and Devices: An Introduction to Fundamentals (Graduate Texts in Physics)

Compact Hierarchical Bipolar Transistor Modeling with Hicum (International Series on Advances in Solid State Electronics & Technology): 0

Wiley Fundamentals of III-V Devices - HBTs, MESFETs, and HEMTs

Transistors!: 1 (New Era Electronics: A Lecture Notes Series)

III-Nitride Electronic Devices: Volume 102 (Semiconductors and Semimetals, Volume 102)

High-Speed Electronics and Optoelectronics: Devices and Circuits

Modern Semiconductor Device Physics

Taylor & Francis Gallium Nitride Power Devices - Tech Book

High-Speed Heterostructure Devices: From Device Concepts to Circuit Modeling

Artech House Parameter Extraction and Transistor Models Book

Fundamentals of Modern VLSI Devices

High-Speed Heterostructure Devices: From Device Concepts to Circuit Modeling

Topics in Growth and Device Processing of III-V Semiconductors (International Series on Advances in Solid State Electronics and Technology): 0

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors

Operation and Modeling of the MOS Transistor

Semiconductor Physics and Applications (Series on Semiconductor Science and Technology)

Mosfet Modeling For Vlsi Simulation: Theory And Practice: 0 (International Series On Advances In Solid State Electronics And Technology)

Beyond the Desert 99: Accelerator, Non-accelerator and Space Approaches into the Next Millennium, Second International Conference on Particle Physics ... Castle Ringberg, Germany, 6-12 June 1999