£101.00

Artech House Parameter Extraction and Transistor Models Book

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£149.00 £96.20 £107.72 £119.24 £130.76 £142.28 £153.80 26 January 2026 15 February 2026 08 March 2026 28 March 2026 18 April 2026

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Description

Master the complexities of semiconductor modeling with this technical resource from Artech House. This book addresses the fundamental reality that all model parameters are coupled together, providing a deeper understanding than standard direct measurements which often only serve as initial estimates. This comprehensive text covers all aspects of modeling semiconductor field-effect device parameters. It focuses specifically on gallium-arsenide (GaAs) and generative adversarial network (GaN) technology. Readers will gain detailed insights into the structures and functions of various components, including metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs), and heterojunction bipolar transistors (HBTs). Whether you are studying existing transistor models or working with advanced semiconductor technologies, this book provides the technical foundation needed to navigate parameter extraction and nonlinear modeling. It is an essential reference for engineers and researchers working within the fields of electronics and communications engineering.

Key Features

Covers advanced modeling for gallium-arsenide (GaAs) and generative adversarial network (GaN) technologies.

Provides detailed analysis of MESFET, HEMT, and HBT structures and their specific functions.

Explains the coupling of model parameters to improve upon standard direct measurement estimates.

Serves as a comprehensive resource for understanding semiconductor field-effect device parameters.

Offers technical depth regarding existing transistor models for electronics engineering professionals.

Product Specifications

Format
hardcover
Domain
Amazon UK
Release Date
31 January 2020
Listed Since
14 September 2019

Barcode

No barcode data available

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