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£149 today · previous high £149 · all-time low £101

Artech House Parameter Extraction and Complex Nonlinear Transistor Models

Amazon

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£149.00 £96.20 £107.72 £119.24 £130.76 £142.28 £153.80 27 July 2026 16 August 2026 05 September 2026 25 September 2026 15 October 2026
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Description

This comprehensive resource from Artech House covers all aspects of semiconductor field-effect device parameter modelling, addressing the fundamental coupling between model parameters that makes direct measurement challenging. The book presents detailed guidance on modelling GaAs and GaN technology transistors, including metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs). It explores device structures, functions and existing transistor models to help engineers and researchers understand how coupled parameters affect accurate device characterisation and prediction. Essential reading for professionals working with advanced semiconductor technologies and nonlinear transistor modelling.

Key Features

Artech House publication covers parameter extraction methods for GaAs and GaN semiconductor devices.

Detailed examination of MESFET, HEMT and HBT structures, functions and established transistor models.

Addresses fundamental parameter coupling challenges in semiconductor field-effect device modelling.

Comprehensive treatment of complex nonlinear transistor models for advanced semiconductor applications.

Product Specifications

Format
hardcover
Domain
Amazon UK
Release Date
31 January 2020
Listed Since
14 September 2019

Barcode

No barcode data available

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