Modeling and Characterization of Rf and Microwave Power Fets (The Cambridge RF and Microwave Engineering Series) - Image 1

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Cambridge University Press Modeling and Characterization of Rf and Microwave Power Fets (The Cambridge RF and Microwave Engineering Series)

Name: Modeling and Characterization of Rf and Microwave Power Fets (The Cambridge RF and Microwave Engineering Series)
Brand: Cambridge University Press
Price: 79.99 GBP
Availability: InStock

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Description

This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

Product Specifications

Brand: Cambridge University Press
Format: paperback
ASIN: 0521336171
Category: Books > Subjects > Computing & Internet > Networking & Security
Domain: Amazon UK
Release Date: 30 June 2011
Listed Since: 07 March 2011

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Cambridge University Press Modeling and Characterization of Rf and Microwave Power Fets (The Cambridge RF and Microwave Engineering Series)

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This is the most expensive it has ever been. Walk away.

Cambridge University Press Modeling and Characterization of Rf and Microwave Power Fets (The Cambridge RF and Microwave Engineering Series)

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