Operation and Modeling of the MOS Transistor - Image 1

£120.00

Oxford University Press Operation and Modeling of the MOS Transistor

Name: Operation and Modeling of the MOS Transistor
Brand: Oxford University Press
Price: 51.99 GBP
Availability: InStock

Computing & Internet

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Description

Extensively revised and updated, this, the second edition of the highly praised text Operation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips. KEY FEATURES .Unified, careful treatment. The book covers in depth the development of many important models, ranging from the simple to the sophisticated, with the connection between models clearly identified. Many aspects of modeling are covered, including: dc, ac, small-signal, large-signal transient, quasi-static, nonquasi-static, and noise. .Expanded coverage. New material is included on a number of topics, including charge sheet models, small-dimension effects, noise, and modeling for RF applications. .New chapter on modeling for CAD. A completely new chapter discusses the context, considerations, and pitfalls associated with the development of models for computer-aided design, and describes ways to evaluate them. .Extensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided."

Product Specifications

Brand: Oxford University Press
Format: hardcover
ASIN: 0195170148
Category: Books > Subjects > Computing & Internet
Domain: Amazon UK
Release Date: 26 June 2003
Listed Since: 04 January 2007

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Oxford University Press Operation and Modeling of the MOS Transistor

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