£127.88

Taylor & Francis Gallium Nitride Power Devices - Tech Book

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Description

Gallium Nitride (GaN) stands as a leading material for next-generation power device applications. Because of its unique properties like high electron mobility, high breakdown field, and wide bandgap, GaN technologies are a top priority for development in the United States, China, Japan, and the European Union. This book by Taylor & Francis provides a deep look into the world of GaN power device technologies. It covers the entire lifecycle of development, from the initial material growth and property analysis to the specifics of device structure design. Readers will find detailed information regarding fabrication processes, reliability, and failure analysis. This resource is designed to support engineers and researchers working on the cutting edge of electrical engineering and power electronics.

Key Features

Comprehensive technical overview of GaN power device technologies and their global development importance.

In-depth coverage of material growth and property analysis for next-generation power applications.

Detailed guidance on device structure design and the essential fabrication process.

Critical insights into reliability testing and failure analysis for power devices.

Expert information on material properties including high breakdown field and electron mobility.

Product Specifications

Format
hardcover
Domain
Amazon UK
Release Date
27 June 2017
Listed Since
09 November 2016

Barcode

No barcode data available

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