Woodhead Publishing Woodhead GaN Transistor Modeling - ASM-HEMT Model Book

Master the complexities of GaN transistor characterization with this professional guide from Woodhead Publishing. This technical resource provides a deep dive into the industry standard ASM-HEMT compact model, specifically designed for RF and power electronics applications. Readers will gain a thorough understanding of core surface-potential calculations and how to account for essential real device effects. The text covers critical phenomena such as trapping, self-heating, and field plate effects to ensure you can replicate realistic device behavior in your designs. Beyond theory, the book offers practical value through step-by-step parameter extraction procedures for the ASM model. Whether you are working on circuit design or semiconductor physics, this book serves as a comprehensive reference for modeling GaN transistors for high-performance electronic systems.