£142.24

Woodhead Publishing Woodhead GaN Transistor Modeling - ASM-HEMT Model Book

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£142.24 £142.09 £142.12 £142.15 £142.19 £142.22 £142.25 19 March 2026 01 April 2026 15 April 2026 29 April 2026 13 May 2026

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Description

Master the complexities of GaN transistor characterization with this professional guide from Woodhead Publishing. This technical resource provides a deep dive into the industry standard ASM-HEMT compact model, specifically designed for RF and power electronics applications. Readers will gain a thorough understanding of core surface-potential calculations and how to account for essential real device effects. The text covers critical phenomena such as trapping, self-heating, and field plate effects to ensure you can replicate realistic device behavior in your designs. Beyond theory, the book offers practical value through step-by-step parameter extraction procedures for the ASM model. Whether you are working on circuit design or semiconductor physics, this book serves as a comprehensive reference for modeling GaN transistors for high-performance electronic systems.

Key Features

Comprehensive analysis of the industry standard ASM-HEMT compact model for GaN transistors.

Detailed coverage of real device effects including trapping, self-heating, and field plate effects.

In-depth technical guidance on core surface-potential calculations for realistic device replication.

Practical step-by-step parameter extraction procedures for the ASM model to assist in design.

Specialized content focused on both RF and power electronics applications for GaN transistors.

Part of the Woodhead Publishing Series in Electronic and Optical Materials for professional engineers.

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