GaN Transistor Modeling for RF and Power Electronics Book - Image 1

£141.37

Elsevier GaN Transistor Modeling for RF and Power Electronics Book

Name: GaN Transistor Modeling for RF and Power Electronics Book
Brand: Elsevier
Price: 141.37 GBP
Availability: InStock

Circuits

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Description

GaN Transistor Modeling for RF and Power Electronics: Using The ASM-HEMT Model is a comprehensive technical resource covering characterization and modeling of GaN transistors for RF and power electronics applications. This Woodhead Publishing book provides in-depth analysis of the industry standard ASM-HEMT compact model for GaN transistors, detailing core surface-potential calculations and real device effects including trapping, self-heating, and field plate effects. The text replicates realistic device behaviour through advanced modeling techniques and includes step-by-step parameter extraction procedures for engineers and researchers working with GaN semiconductor technology in power conversion and RF circuit design.

Key Features

ASM-HEMT compact model analysis for GaN transistors used in RF and power electronics design and simulation.

Core surface-potential calculations and real device effect modeling including trapping and self-heating behaviour.

Field plate effects and additional semiconductor phenomena covered to achieve realistic GaN transistor representation.

Step-by-step parameter extraction procedures included for model implementation and validation.

Published by Woodhead Publishing in the Electronic and Optical Materials series for engineering professionals.

Product Specifications

Brand: Elsevier
Format: paperback
ASIN: 0323998712
Category: Books > Subjects > Science, Nature & Maths > Engineering & Technology > Electronics & Communications Engineering > Electronics Engineering > Circuits
Domain: Amazon UK
Release Date: 31 May 2024
Listed Since: 24 May 2022

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Elsevier GaN Transistor Modeling for RF and Power Electronics Book

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