Strain-Induced Effects in Advanced MOSFETs: 0 (Computational Microelectronics) - Image 1

£86.21

Springer Strain-Induced Effects in Advanced MOSFETs: 0 (Computational Microelectronics)

Name: Strain-Induced Effects in Advanced MOSFETs: 0 (Computational Microelectronics)
Brand: Springer
Price: 80.61 GBP
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Electronics Engineering

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Product Description Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given. From the Back Cover Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given

Product Specifications

Brand: Springer
Format: hardcover
ASIN: 3709103819
Category: Books > Subjects > Science, Nature & Maths > Engineering & Technology > Electronics & Communications Engineering > Electronics Engineering
Domain: Amazon UK
Release Date: 24 November 2010
Listed Since: 22 July 2010

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Springer Strain-Induced Effects in Advanced MOSFETs: 0 (Computational Microelectronics)

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