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Springer Long-Term Reliability of Nanometer VLSI Systems - Springer

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£109.09 £105.45 £106.24 £107.04 £107.83 £108.63 £109.42 26 July 2026 13 August 2026 01 September 2026 19 September 2026 08 October 2026
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Description

This comprehensive reference examines electromigration and biased temperature instability in nanometer integrated systems, covering physics-based EM modelling, multi-layer interconnect analysis, and BTI effects on CMOS devices. The book provides detailed coverage of reliability modelling, analysis and optimisation strategies across circuit, architecture and system levels of abstraction. Engineers and researchers working with nanometer-scale VLSI design will find essential guidance on managing long-term aging effects and failure mechanisms that impact integrated circuit performance and lifespan. Topics include recent developments in EM and BTI-induced failure prediction and mitigation techniques for modern semiconductor systems.

Key Features

Covers electromigration and biased temperature instability as primary long-term reliability concerns in nanometer VLSI systems.

Provides physics-based electromigration modelling approaches for multi-layer interconnect structures in advanced integrated circuits.

Addresses reliability analysis and optimisation techniques across circuit, architecture and system levels of design abstraction.

Discusses BTI effects on CMOS devices and strategies to mitigate temperature-induced performance degradation.

Offers practical insights into modelling and predicting electromigration-induced failures in nanometer-scale semiconductor systems.

Product Specifications

Format
hardcover
Domain
Amazon UK
Release Date
25 September 2019
Listed Since
22 June 2019

Barcode

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