£49.66

Springer - Long-Term Reliability of Nanometer VLSI Systems

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Description

This technical reference from Springer provides an in-depth look at two major long-term reliability and aging effects in nanometer integrated systems. The text focuses on electromigration (EM) for interconnects and biased temperature instability (BTI) for CMOS devices, offering a comprehensive guide for professionals and researchers in the field of computer architecture and microprocessors. The book covers recent developments in the modeling, analysis, and optimization of reliability effects. It explores how EM and BTI induced failures impact systems at multiple levels of abstraction, including circuit, architecture, and system levels. Readers gain access to detailed discussions on physics-based EM modeling and contemporary methods to address these critical hardware challenges. Whether you are studying semiconductor reliability or designing next-generation integrated circuits, this book serves as a detailed resource for understanding the physical phenomena that affect the lifespan and stability of nanometer-scale VLSI systems.

Key Features

Covers critical aging effects including electromigration (EM) for interconnects and biased temperature instability (BTI) for CMOS devices.

Provides detailed analysis of reliability effects at the circuit, architecture, and system levels of abstraction.

Includes information on recently developed physics-based EM modeling to improve system accuracy.

Serves as a detailed reference for the modeling, analysis, and optimization of nanometer integrated systems.

Focuses on the practical implications of EM and BTI induced failures in modern semiconductor technology.

Product Specifications

Format
hardcover
Domain
Amazon UK
Release Date
25 September 2019
Listed Since
22 June 2019

Barcode

No barcode data available

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