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Springer : Fundamental Aspects of Ultrathin Dielectrics on Si

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Description

Explore the essential scientific research behind next-generation semiconductor technology with this technical volume from Springer. As ULSI scaling trends push minimum feature sizes below 0.1 mu and gate thicknesses below 3 nm, understanding ultrathin gate dielectrics becomes a necessity for the industry. This book provides a detailed review at the nano and atomic scale regarding the complex scientific issues facing silicon systems. It covers critical developments in silicon oxide, oxynitride, and high K materials, specifically focusing on the highly sensitive 1-3 nm regime. This text is a vital resource for researchers and professionals tracking the evolution of Si-based devices. It addresses the aggressive development programs required to maintain scaling trends, making it a significant addition to the NATO Science Partnership Subseries. Whether you are studying material science or advanced computing hardware, this volume offers a deep look into the materials that will define the future of silicon-based electronics.

Key Features

Technical review of ultrathin dielectrics at the nano and atomic scale for advanced semiconductor research.

In-depth analysis of silicon oxide, oxynitride, and high K materials on silicon systems.

Focuses on the critical 1-3 nm regime essential for next-generation Si-based device development.

Part of the NATO Science Partnership Subseries (Volume 47) for academic and professional use.

Used book in good condition, providing a cost-effective way to access specialized scientific knowledge.

Addresses the scaling trends required for feature sizes below 0.1 mu and gate thicknesses under 3 nm.

Product Specifications

Format
hardcover
Domain
Amazon UK
Release Date
31 March 1998
Listed Since
20 February 2007

Barcode

No barcode data available

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