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Springer Ultrathin Dielectrics on Si-based Devices - NATO Science Partnership

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Description

This Springer scientific text explores the fundamental aspects of ultrathin dielectrics essential for advanced silicon-based device fabrication. As ULSI scaling trends demand minimum feature sizes below 0.1 micrometers and gate thicknesses below 3 nanometres, understanding ultrathin gate dielectrics becomes critical for next-generation semiconductor technology. The book provides comprehensive coverage of silicon oxide, oxynitride, and high-K materials on silicon systems, with particular focus on the challenging 1-3 nanometre ultrathin regime. Through nano and atomic-scale analysis, this NATO Science Partnership publication addresses the complex scientific issues researchers and engineers encounter when developing and implementing ultrathin dielectrics in cutting-edge Si device applications.

Key Features

Part of NATO Science Partnership Subseries: 3, Volume 47, providing peer-reviewed research on semiconductor dielectrics.

Focuses on ultrathin dielectrics in the critical 1-3 nm range required for next-generation silicon device development.

Covers silicon oxide, oxynitride, and high-K materials systems with detailed nano and atomic-scale analysis.

Addresses ULSI scaling challenges including minimum feature sizes below 0.1 micrometres and gate thicknesses under 3 nm.

Published by Springer as a used book in good condition, suitable for researchers and semiconductor engineering professionals.

Product Specifications

Format
hardcover
Domain
Amazon UK
Release Date
31 March 1998
Listed Since
20 February 2007

Barcode

No barcode data available

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