Springer - Fundamental Aspects of Ultrathin Dielectrics on Si

As ULSI scaling trends push minimum feature sizes below 0.1 mu and gate thicknesses below 3 nm, understanding the science of ultrathin dielectrics becomes essential for next-generation Si-based devices. This Springer publication provides a detailed review of the complex scientific issues occurring at the nano and atomic scales. The text focuses on the critical 1-3 nm regime, examining silicon oxide, oxynitride, and high K materials on silicon systems. It serves as a technical resource for those following the development of aggressive programs in semiconductor research and the evolution of gate dielectrics. By addressing the fundamental scientific research required for these advancements, the book offers a deep look into the materials that will define future silicon-based technology.