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Springer - Fundamental Aspects of Ultrathin Dielectrics on Si

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Description

As ULSI scaling trends push minimum feature sizes below 0.1 mu and gate thicknesses below 3 nm, understanding the science of ultrathin dielectrics becomes essential for next-generation Si-based devices. This Springer publication provides a detailed review of the complex scientific issues occurring at the nano and atomic scales. The text focuses on the critical 1-3 nm regime, examining silicon oxide, oxynitride, and high K materials on silicon systems. It serves as a technical resource for those following the development of aggressive programs in semiconductor research and the evolution of gate dielectrics. By addressing the fundamental scientific research required for these advancements, the book offers a deep look into the materials that will define future silicon-based technology.

Key Features

Provides a technical review of scientific issues related to ultrathin dielectrics at the nano and atomic scale.

Examines the critical 1-3 nm regime for silicon oxide, oxynitride, and high K materials on silicon systems.

Addresses the requirements for next-generation Si-based devices as ULSI scaling trends continue to evolve.

Covers essential research topics for gate thicknesses below 3 nm and feature sizes below 0.1 mu.

Part of the NATO Science Partnership Subseries (Volume 3, 47) for academic and professional reference.

Product Specifications

Format
paperback
Domain
Amazon UK
Release Date
31 March 1998
Listed Since
09 December 2006

Barcode

No barcode data available

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