Development, Design and Analysis of Type-II Hetero-Strained Nanosystem - Image 1

£64.51

LAP Lambert Academic Publishing Development, Design and Analysis of Type-II Hetero-Strained Nanosystem

Name: Development, Design and Analysis of Type-II Hetero-Strained Nanosystem
Brand: LAP Lambert Academic Publishing
Price: 64.51 GBP
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Electronics Engineering

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Description

This book investigates the advancement and analysis of strained channel cylindrical gate-all-around (CGAA) FETs. The study explores a nano-scale design incorporating three ultrathin strained layers: two outer layers of strained silicon (s-Si) and a middle layer of strained silicon germanium (s-SiGe), forming a heterostructure-on-insulator (HOI) within the CGAA FET. These strained layers in the channel effectively confine quantum carriers, thereby enhancing carrier mobility and reducing threshold voltage roll-off.

Product Specifications

Brand: LAP Lambert Academic Publishing
Format: paperback
ASIN: 6200381585
Category: Books > Subjects > Science, Nature & Maths > Engineering & Technology > Electronics & Communications Engineering > Electronics Engineering
Domain: Amazon UK
Release Date: 29 September 2025
Listed Since: 05 November 2025

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LAP Lambert Academic Publishing Development, Design and Analysis of Type-II Hetero-Strained Nanosystem

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