AlGaN/GaN Heterostructures: Fabrication and Electrical Characterization: Fabrication And Electrical Characterization Of AlGaN/GaN HFETs - Image 1

£49.00

LAP Lambert Academic Publishing AlGaN/GaN Heterostructures: Fabrication and Electrical Characterization: Fabrication And Electrical Characterization Of AlGaN/GaN HFETs

Name: AlGaN/GaN Heterostructures: Fabrication and Electrical Characterization: Fabrication And Electrical Characterization Of AlGaN/GaN HFETs
Brand: LAP Lambert Academic Publishing
Price: 49.0 GBP
Availability: InStock

Engineering & Technology

Price data last checked 24 day(s) ago - will refresh soon

View at Amazon

We'll watch every seller, every day. One email when your price arrives.

It has never been this cheap. We have no record of a lower price.

£49 today · cheaper than every other day in the last 3 months

NEW HERE?

Amazon shows you one price. We show you all of them.

Tosheroon watches Amazon prices so you don't have to. Every product on Amazon has a price history — we make it visible. Set the price you'd actually pay, and we'll email you the second it gets there. No app, no account, one email.

WHAT'S ON THIS PAGE

↓ Price chart
when this has been cheap or pricey

↓ Forecast
where the price is heading next

↓ Statistics
all-time high & low, recent range

↑ Price alert
name your number, we'll email you

Price History & Forecast

Grey patches = out of stock. Cheaper = lower on the chart. Hover for exact prices.

Last 67 days · 67 data points (no recent data)

Historical

Generating forecast…

Price Distribution

Price distribution over 67 days • 1 price levels

Days at Price

Price Analysis

Most common price: £49 (67 days, 100.0%)

Price range: £49 - £49

Price levels: 1 different prices over 67 days

Description

Group III-nitrides, in particular GaN and its heterostructures with AlGaN, have some unique electronic material properties that make these material systems almost ideally suited for the fabrication of a number of high-performance electronic and optoelectronic devices. A study of MBE grown Al0.2Ga0.8N/GaN heterostructures was conducted. Rectifying and ohmic contacts were fabricated for electrical characterization of the heterostructure. These contacts were fabricated by sputter deposition of metal films. A multi-layer Ti/Al/Ni/Au (15/60/35/50nm) metallization and subsequent anneal was employed to form ohmic contacts. A contact resistivity of 2.0 x 10-3 Ohm.cm2 was obtained. Though this value was high but was expected of unintentionally doped n/n Ni Al0.2Ga0.8N/GaN unipolar heterostructure. Rectifying contacts were obtained by depositing Ni on the AlGaN/GaN film, overcoated with Au (Ni/Au, 20/180nm). Fabricated HEMT devices exhibited transistor behavior with transconductance values between of 1.0 and 2.5 mS; however, saturation was not observed. A drift mobility ~130 cm2/V.s was estimated from the calculated transconductance.

Product Specifications

Brand: LAP Lambert Academic Publishing
Format: paperback
ASIN: 383837181X
Category: Books > Subjects > Science, Nature & Maths > Engineering & Technology
Domain: Amazon UK
Release Date: 10 June 2010
Listed Since: 15 June 2010

Barcode

No barcode data available

LAP Lambert Academic Publishing AlGaN/GaN Heterostructures: Fabrication and Electrical Characterization: Fabrication And Electrical Characterization Of AlGaN/GaN HFETs

It has never been this cheap. We have no record of a lower price.

Price History & Forecast

Price Distribution

Price Analysis

Description

Product Specifications

Barcode

Similar Products You Might Like

Electrochemical Synthesis of Metal Nanowires

Nanostructured Conducting Polyaniline: Synthesis, Characterization and Supercapacitor Application

Composite Materials: Theoretical and Experimental Approach

Heat Transfer with Nanofluid: Experimental Investigation of Convective Heat Transfer of Al2O3-Water Nanofluid

Inorganic Nanomaterials: Synthesis, Characterization and Applications

Synthesis and Studies on the Properties of Ferritic Nanoparticles

Synthesis and Opto-electronic Characterization of some Metal Complexes: Metal Complexes for Organic Light Emitting Devices Applications

Uglerodnye nanomaterialy - napolniteli dlya epoksidnykh kompozitov: Elektrofizicheskie svoystva i termookislitel'naya stabil'nost'

Opticheskie nanoantenny

Green synthesis of nanocomposites of lead oxide nanoparticles

Composite Materials For Microwave Applications: Electromagnetic Properties of Chemically Synthesized Conducting Polymer/Hexaferrite Composites

Equispaced level Quatum wells and Semiconductor alloy Nanostructures: Equispaced level conduction band Quantum wells Hamiltonians with application to Semiconductor alloy Nanostructures

Buckling Of Composites: Practical Approach

Crystal Field Theory:: Introduction to Crystal Field Splitting

Nanostructured MIM Capacitors using Anodization Technique

Design And Evaluation Of Mach-Zehnder Modulator

Core-shell nanostructures for photonics applications: Optical core-shell nanostructures

Termicheskoe issledovanie sistem CaO–Al2O3 i ZrO2–Al2O3: Eksperiment i analiticheskiy obzor

Teplofizicheskie svoystva splava AMg2 s redkozemel'nymi metallami: Teplofizicheskie svoystva i termodinamicheskie funktsii splava AMg2 s redkozemel'nymi metallami

Stabilizatsiya nanochastits metallov gidrofil'nymi polimerami

Improving the Efficiency of SfM and its Applications

Introduction of Nanoscience: A Basic Idea of Nanomaterials Synthesis and Characterization

Immobilization of Metallophthalocyanines on Mesoporous Material: Characterization and Application in Oxidation of Organic Compound

Methanol - Sustainable Fuel