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Elsevier Silicon-Germanium Strained Layers and Heterostructures: Semi-Conductor and Semi-Metals Series: 74 (Semiconductors and Semimetals): Volume 74

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Description

The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. * Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review * The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject * Appropriate for students and senior researchers Review A comprehensive overview of recent research on Silicon-Germanium structures, informing the development of semi-conductors. About the Author Edited by Suresh Jain and M Willander

Product Specifications

Format
hardcover
Domain
Amazon UK
Release Date
01 October 2003
Listed Since
19 December 2006

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