£107.98

Springer Strain-Induced Effects in Advanced MOSFETs: 0 (Computational Microelectronics)

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£107.98 £107.38 £107.51 £107.64 £107.77 £107.90 £108.04 05 April 2026 18 April 2026 01 May 2026 14 May 2026 28 May 2026

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Description

This book covers modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is explored in devices using analytical k.p and numerical pseudopotential methods. Includes a rigorous overview of transport modeling. From the Back Cover Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given

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