Hafnium Oxide And Hafnium Silicate For High-k Application: Characterization of Hafnium Based Oxide Thin Films Deposited by CVD: Characterization of ... For High-k Application in Transistors - Image 1

£70.00

LAP Lambert Academic Publishing Hafnium Oxide And Hafnium Silicate For High-k Application: Characterization of Hafnium Based Oxide Thin Films Deposited by CVD: Characterization of ... For High-k Application in Transistors

Name: Hafnium Oxide And Hafnium Silicate For High-k Application: Characterization of Hafnium Based Oxide Thin Films Deposited by CVD: Characterization of ... For High-k Application in Transistors
Brand: LAP Lambert Academic Publishing
Price: 70.0 GBP
Availability: InStock

Bioengineering

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Description

Novel materials with high-dielectric(k) constants are rapidly gaining attention for their application as gate insulator for future MOS transistors. This book provides the basic principles underlying chemical vapor deposition (CVD) of hafnium oxide and hafnium silicate thin films for high-k application. In addition to the deposition fundamentals, the discussions in the book provide valuable insights to various chemical and physical characterization techniques that can be applied to thin films in general. This easy-to-understand and well- illustrated text is designed for both beginners as well as advanced researchers with a good introduction to the subject of high-k thin films.

Product Specifications

Brand: LAP Lambert Academic Publishing
Format: paperback
ASIN: 3838333888
Category: Books > Subjects > Science, Nature & Maths > Engineering & Technology > Bioengineering
Domain: Amazon UK
Release Date: 01 April 2010
Listed Since: 05 April 2010

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LAP Lambert Academic Publishing Hafnium Oxide And Hafnium Silicate For High-k Application: Characterization of Hafnium Based Oxide Thin Films Deposited by CVD: Characterization of ... For High-k Application in Transistors

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