High-k Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) - Image 1

£110.05

CRC Press High-k Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)

Name: https://tosheroon.com/uploads/images/products/2/B0CSSRHKG9/d2c527f6-66e8-4f56-99cc-41f8674f5a37.webp
Brand: CRC Press
Price: 110.12 GBP
Availability: InStock

Electrical Engineering

Price History & Forecast

Last 34 days • 34 data points (No recent data available)

Historical

Generating forecast...

Price Distribution

Price distribution over 34 days • 2 price levels

Days at Price

Current Price

Price Analysis

Most common price: £110 (30 days, 88.2%)

Price range: £110 - £110

Price levels: 2 different prices over 34 days

Description

Product Description This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology. About the Author Niladri Pratap Maity, PhD, is an Associate Professor in the Department of Electronics and Communication Engineering at Mizoram University, India. He is the author of more than 110 journal articles and conference papers and the recipient of several best/excellent paper awards. He was a Visiting Scientist at the Department of Science and Technology, Government of India. His research interests include VLSI design, MOS device modeling, and MEMS. Reshmi Maity, PhD, is an Assistant Professor in the Department of Electronics and Communication Engineering, Mizoram University, Aizawl, India. Prior to that, she was an Assistant Professor at the JIS College of Engineering (West Bengal University of Technology) at Kolkata, India. She is the author of more than 80 refereed publications. Her research interests include VLSI design, nanoelectronics, and MEMS. Srimanta Baishya, PhD, is a Professor in the Department of Electronics and Communication Engineering at the National Institute of Technology Silchar, India. Before that, he was an Assistant Professor in the Department of Electronics and Telecommunication Engineering of the same college. His research interests cover semiconductor devices and circuits, MOS transistor modeling, and MEMSbased energy harvesting. He has published over 60 papers in peer-reviewed journals.

Product Specifications

Brand: CRC Press
Format: Hardcover
ASIN: 1771888431
Category: Books > Subjects > Science, Nature & Maths > Engineering & Technology > Electrical > Electrical Engineering
Domain: Amazon UK
Release Date: 18 December 2020
Listed Since: 24 July 2019

Barcode

No barcode data available

CRC Press High-k Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)

Price History & Forecast

Price Distribution

Price Analysis

Description

Product Specifications

Barcode

Similar Products You Might Like

Nano-CMOS Gate Dielectric Engineering

Springer - Materials Fundamentals of Gate Dielectrics Book

Strain-Engineered MOSFETs

CRC Press Strain-Engineered MOSFETs - Engineering Textbook

III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics

Low-Frequency Noise in Advanced MOS Devices (Analog Circuits and Signal Processing)

Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications

MOS Devices for Low-Voltage and Low-Energy Applications (IEEE Press)

Nanostructured Metal Oxides and Devices: Optical and Electrical Properties (Materials Horizons: From Nature to Nanomaterials)

Nanoelectronic Device Applications Handbook (Devices, Circuits, and Systems)

CRC Press Nanotechnology: Synthesis to Applications Book

Advanced Ultra Low-Power Semiconductor Devices: Design and Applications

Micro- and Nanoelectronics: Emerging Device Challenges and Solutions (Devices, Circuits, and Systems)

Active Metamaterials: Terahertz Modulators and Detectors

Stress and Strain Engineering at Nanoscale in Semiconductor Devices

Proceedings of the Third International Conference on Microelectronics, Computing and Communication Systems: MCCS 2018: 556 (Lecture Notes in Electrical Engineering, 556)

Semiconductor Nanocrystals and Metal Nanoparticles: Physical Properties and Device Applications (Advances in Materials Science and Engineering)

Nanostructured Semiconductors in Porous Alumina Matrices: Modeling, Synthesis, and Properties

CRC Press Ultrathin 2D Semiconductors for Electronic Applications

Electronic Materials and Devices

Advanced Materials for Future Terahertz Devices, Circuits and Systems: 727 (Lecture Notes in Electrical Engineering, 727)

Micro- and Nanoelectronics: Emerging Device Challenges and Solutions: 35 (Devices, Circuits, and Systems)

Defects in Microelectronic Materials and Devices

Metal Oxide Semiconductors: Synthesis, Properties, and Devices