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Institution of Engineering & Technology IET Wide Bandgap Power Semiconductor Devices Book

Amazon

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£116.71 £105.20 £107.71 £110.22 £112.74 £115.25 £117.76 25 July 2026 30 July 2026 04 August 2026 09 August 2026 15 August 2026
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Description

Explore the evolution of power electronics with Characterization of Wide Bandgap Power Semiconductor Devices from the Institution of Engineering and Technology. This technical resource focuses on the shift from silicon-based devices to wide bandgap (WBG) technologies, including silicon carbide and gallium nitride. As power electronics converters move toward higher efficiency, smaller size, and lower weight, understanding WBG semiconductors becomes essential. This book addresses the specific challenges posed by these materials, such as fast switching speeds and the increased need for protection in converter design. It provides the necessary insights for engineers working to implement these advanced materials to create more cost-effective and high-performance power systems.

Key Features

Covers the transition from silicon-based devices to wide bandgap (WBG) semiconductor technologies.

Provides technical insights into silicon carbide and gallium nitride applications for power electronics.

Addresses design challenges related to the fast switching speeds of WBG semiconductor devices.

Discusses the requirements for enhanced protection in modern power electronics converters.

Published by the Institution of Engineering and Technology for professional engineering use.

Product Specifications

Format
hardcover
Domain
Amazon UK
Release Date
31 October 2018
Listed Since
07 February 2018

Barcode

No barcode data available

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