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Institution of Engineering & Technology IET SiC Power Module Design - Energy Engineering Book

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Description

Explore the transition from silicon to Wide Bandgap (WBG) technology with SiC Power Module Design: Performance, robustness and reliability. As high-frequency switching power semiconductor devices move beyond the physical limits of silicon, this book from the Institution of Engineering & Technology addresses the growing need for higher efficiency and smaller, lighter power conversion solutions. This text covers the essential developments in semiconductor technology required for modern applications. It provides technical insights into overcoming technological bottlenecks in power grid electronics and the rapidly rising field of electromobility. Ideal for engineers and students in the Energy Engineering sector, this resource focuses on achieving better performance, increased robustness, and improved reliability in power module design.

Key Features

Published by the Institution of Engineering & Technology to provide expert knowledge on energy engineering.

Covers the shift from silicon (Si) technology to Wide Bandgap (WBG) semiconductor devices.

Explores methods to achieve higher efficiency, smaller size, and lighter weight in power conversion.

Addresses technological bottlenecks necessary for advancements in electromobility and power grid electronics.

Focuses on the performance, robustness, and reliability of SiC power module designs.

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