Scanning Capacitance Microscopy: and Spectroscopy on Semiconductor Materials - Image 1

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Südwestdeutscher Verlag für Hochschulschriften Scanning Capacitance Microscopy: and Spectroscopy on Semiconductor Materials

Nanotechnology

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Description

In this PhD-thesis, Scanning Capacitance Microscopy(SCM) and Scanning Capacitance Spectroscopy (SCS) was appliedto investigate various silicon samples. SCM is used to investigatethe electrical behaviour of samples with a lateral resolution below100 nm. The work is divided into 3 major experimental parts: (1)the properties of metal organic chemical vapour deposited zirconiumdioxide as dielectric material for SCM was explored. Usage ofzirconium dioxide leads to reduced leakage currents andimproved signal quality. (2) focussed ion beam induced damage insilicon was investigated with SCM. The beam shape and the rangeof ion damage inside the sample was investigated. The SCMdata were compared with transmission electron microscopy data.(3) a setup for quantitative Scanning Capacitance Spectroscopywith an external capacitance bridge connected to an atomic forcemicroscope was designed. This setup is sensitive enough to resolvethe energetic distribution of interface trapped charges and toquantitatively measure the local oxide charge density distributionof zirconium dioxide layers.

Product Specifications

Brand: Südwestdeutscher Verlag für Hochschulschriften
Format: paperback
ASIN: 3838102673
Category: Books > Subjects > Science, Nature & Maths > Engineering & Technology > Electrical > Nanotechnology
Domain: Amazon UK
Publication Date: 20 January 2009
Listed Since: 23 March 2009

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Südwestdeutscher Verlag für Hochschulschriften Scanning Capacitance Microscopy: and Spectroscopy on Semiconductor Materials

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