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VDM Verlag Nanometer-Scale Resistivity of Copper Films and Interconnects: Simulation and Measurement of Nanometer-Scale Resistivity of Copper Films for Interconnect Applications

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£42.00 £39.90 £40.74 £41.58 £42.42 £43.26 £44.10 23 July 2026 05 August 2026 18 August 2026 31 August 2026 14 September 2026
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Description

A highly versatile simulation program is developed and used to examine how the resistivity of thin metal films and lines increases as their dimensions approach and become smaller than the mean free path of electrons in metals such as copper (size effect). The simulation program: 1) provides a more accurate calculation of surface scattering effects than that obtained from the usual formulation of Fuchs¿ theory, 2) calculates grain-boundary effects that are consistent with the theory of Mayadas and Shatzkes, 3) includes the effects of surface and grain-boundary scattering either separately or together, and 4) simulates the effect on resistivity if a surface of a film or line has a different value for the scattering parameter. The increase in resistivity with decreasing thickness of thin, evaporated copper films (approximately 10 nm to 150 nm thick) was determined from sheet resistance and film thickness measurements. Good agreement between the experimental results with those of the simulation program was obtained when the measured mean grain sizes were used by the simulation program.

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