Springer Long-Term Reliability of Nanometer VLSI Systems: Modeling, Analysis and Optimization

This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices.  The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction.  Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques. Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models; Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects; Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels; Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters. From the Back Cover This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices.  The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction.  Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques. Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models; Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects; Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels; Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters. About the Author Sheldon Tan is a Professor in the Department of Electrical and Computer Engineering, University of California, Riverside, CA. He also is a cooperative faculty member in the   Department of Computer Science and Engineering at UCR. He  received Ph.D. degree in electrical and computer engineering from the University of Iowa, Iowa City, in 1999. His research interests include VLSI reliability modeling, optimization and management at circuit and system levels, hardware security, thermal modeling, optimization and dynamic thermal management for many-core processors, parallel computing and adiabatic and Ising computing based on GPU and multicore systems. He has published more 290 technical papers and has co-authored 6 books on those areas. Dr. Tan received NSF CAREER Award in 2004. He also received three Best Paper Awards from ASICON’17, ICCD'07, DAC’09. He also received the Honorable Mention Best Paper Award from SMACD’18