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Institution of Engineering & Technology SiC Power Module Design: Performance, robustness and reliability (Energy Engineering)

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Last 42 days · 42 data points (no recent data)

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£124.99 £15.00 £39.00 £63.00 £86.99 £110.99 £134.99 09 July 2026 19 July 2026 29 July 2026 08 August 2026 19 August 2026

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Price range: £25 - £125

Price levels: 2 different prices over 42 days

Description

High-frequency switching power semiconductor devices are at the heart of power electronic converters. To date, these devices have been dominated by the well-established silicon (Si) technology. However, their intrinsic physical limits are becoming a barrier to achieving higher performance power conversion. Wide Bandgap (WBG) semiconductor devices offer the potential for higher efficiency, smaller size, lighter weight, and/or longer lifetime. Applications in power grid electronics as well as in electromobility are on the rise, but a number of technological bottle-necks need to be overcome if applications are to become more widespread - particularly packaging. This book describes the development of advanced multi-chip packaging solutions for novel WBG semiconductors, specifically silicon carbide (SiC) power MOSFETs. Coverage includes an introduction; multi-chip power modules; module design and transfer to SiC technology; electrothermal, thermo-mechanical, statistical and electromagnetic aspects of optimum module design; high temperature capable SiC power modules; validation technologies; degradation monitoring; and emerging packaging technologies. The book is a valuable reference for researchers and experts in academia and industry.

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