£85.65

SiC Power Module Design: Performance, robustness and reliability (Energy Engineering)

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Last 583 days • 583 data points (No recent data available)

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£147.20 £12.78 £42.11 £71.44 £100.76 £130.09 £159.42 10 June 2024 02 November 2024 28 March 2025 20 August 2025 13 January 2026

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125 days 5 days · current 333 days 120 days 0 83 167 250 333 £25-49 £74-98 £98-123 £123-147 Days at Price

Price Analysis

Most common range: £98-123 (333 days, 57.1%)

Price range: £25 - £147

Price levels: 4 price ranges over 583 days

Description

High-frequency switching power semiconductor devices are at the heart of power electronic converters. To date, these devices have been dominated by the well-established silicon (Si) technology. However, their intrinsic physical limits are becoming a barrier to achieving higher performance power conversion. Wide Bandgap (WBG) semiconductor devices offer the potential for higher efficiency, smaller size, lighter weight, and/or longer lifetime. Applications in power grid electronics as well as in electromobility are on the rise, but a number of technological bottle-necks need to be overcome if applications are to become more widespread - particularly packaging. This book describes the development of advanced multi-chip packaging solutions for novel WBG semiconductors, specifically silicon carbide (SiC) power MOSFETs. Coverage includes an introduction; multi-chip power modules; module design and transfer to SiC technology; electrothermal, thermo-mechanical, statistical and electromagnetic aspects of optimum module design; high temperature capable SiC power modules; validation technologies; degradation monitoring; and emerging packaging technologies. The book is a valuable reference for researchers and experts in academia and industry.

Product Specifications

Format
hardcover
Domain
Amazon UK
Release Date
03 February 2022
Listed Since
03 March 2021

Barcode

No barcode data available

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