£113.77

Institution of Engineering & Technology Characterization of Wide Bandgap Power Semiconductor Devices (Energy Engineering)

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Last 582 days • 582 data points (No recent data available)

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£138.30 £99.71 £108.13 £116.55 £124.97 £133.39 £141.81 09 June 2024 01 November 2024 26 March 2025 18 August 2025 11 January 2026

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58 days 494 days · current 30 days 0 124 247 371 494 £103-110 £110-117 £131-138 Days at Price

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Most common range: £110-117 (494 days, 84.9%)

Price range: £103 - £138

Price levels: 3 price ranges over 582 days

Description

At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection.Characterization of Wide Bandgap Power Semiconductor Devices presents comprehensive methods with examples for the characterization of this important class of power devices. After an introduction, the book covers pulsed static characterization; junction capacitance characterization; fundamentals of dynamic characterization; gate drive for dynamic characterization; layout design and parasitic management; protection design for double pulse test; measurement and data processing for dynamic characterization; cross-talk consideration; impact of three-phase system; and topology considerations.

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