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Springer Ferroelectric Memories: 3 - Advanced Microelectronics Springer Series

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Description

Ferroelectric Memories: 3 is a comprehensive academic text covering the evolution of ferroelectric memory technology from laboratory research to large-scale commercial production. This book serves applied physicists, electrical engineers, materials scientists and ceramists with in-depth coverage of ferroelectric fundamentals, particularly thin film technology, alongside detailed circuit diagrams and processing methodologies. The text emphasises device physics with extensive chapters dedicated to breakdown mechanisms, switching kinetics and leakage current mechanisms, providing both theoretical knowledge and practical engineering insights essential for understanding modern ferroelectric memory systems and their development.

Key Features

Springer Series in Advanced Microelectronics volume 3 offering comprehensive ferroelectric memory technology coverage for academic and professional readers.

Covers ferroelectric fundamentals with specialised focus on thin film applications and properties relevant to modern device design.

Includes detailed circuit diagrams and processing chapters demonstrating the transition from research to commercial-scale ferroelectric memory production.

Features extensive analysis of breakdown mechanisms, switching kinetics and leakage current mechanisms critical to ferroelectric device performance.

Targets applied physicists, electrical engineers, materials scientists and ceramists seeking unified reference material rather than edited paper collections.

Product Specifications

Format
hardcover
Domain
Amazon UK
Release Date
05 May 2000
Listed Since
22 December 2006

Barcode

No barcode data available

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