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Taylor & Francis Hydrogenated Dilute Nitride Semiconductors - Theory & Applications

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Description

Explore the transformative effects of hydrogen passivation and nitrogen's nonlinear behaviour in dilute nitride semiconductors through this comprehensive guide from Taylor & Francis. This advanced text examines how atomic hydrogen irradiation modifies electronic structure, optical properties, and structural characteristics in these technologically critical materials. The book synthesises experimental findings from multiple analytical techniques with cutting-edge theoretical research to clarify hydrogenation mechanisms and their practical implications. Ideal for researchers, engineers, and graduate students seeking in-depth understanding of nanostructured device development with in-plane optical band gap variation, this resource bridges fundamental semiconductor physics with real-world applications in modern electronics and photonics.

Key Features

Comprehensive coverage of nitrogen's nonlinear behaviour and hydrogen passivation effects in dilute nitride semiconductors.

Detailed analysis of electronic structure modifications induced by atomic hydrogen irradiation in these materials.

Integration of experimental results from multiple characterisation techniques with advanced theoretical studies.

Focus on optical and structural property changes essential for nanostructured device engineering and band gap engineering.

Product Specifications

Format
hardcover
Domain
Amazon UK
Release Date
01 April 2015
Listed Since
25 February 2015

Barcode

No barcode data available

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