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Springer High-Frequency GaN Electronic Devices Book

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Description

Explore the latest research in high-frequency GaN electronic devices with this technical volume from Springer. This book provides a deep dive into the III-N material system, covering both aggressively-scaled conventional transistors and unconventional high-frequency device concepts. Readers will find detailed discussions on device concepts for mm-wave to THz operation using deeply-scaled HEMTs. The text also examines distributed device designs based on hot-carrier injection, tunneling, and plasma-wave propagation in polarization-induced 2DEG channels. Beyond device design, the book covers advancements in materials science that enable these technologies and updates in metrology. It serves as a comprehensive resource for scientists and device engineers focused on the future of electronics and communications engineering.

Key Features

This Springer publication covers recent research on aggressively-scaled conventional transistors and unconventional high-frequency device concepts.

The text details device concepts for mm-wave to THz operation based on deeply-scaled HEMTs within the III-N material system.

Learn about distributed device designs involving plasma-wave propagation in polarization-induced 2DEG channels.

Explore technical discussions regarding tunneling and hot-carrier injection in high-frequency electronic devices.

The book includes information on advancements in materials science and metrology that support these device demonstrations.

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