£106.78

Springer High-Frequency GaN Electronic Devices Book

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£117.76 £105.68 £108.32 £110.95 £113.59 £116.22 £118.86 14 March 2026 23 March 2026 01 April 2026 10 April 2026 19 April 2026

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Description

Explore the latest developments in III-N material systems with High-Frequency GaN Electronic Devices by Springer. This technical resource brings together recent research from scientists and device engineers focused on both aggressively-scaled conventional transistors and unconventional high-frequency device concepts. Readers will find detailed discussions on device concepts designed for mm-wave to THz operation. The text covers deeply-scaled HEMTs and distributed device designs that utilize plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection. Beyond device design, this book addresses the materials science advancements that make these demonstrations possible. It serves as a comprehensive guide for those studying the intersection of electronics engineering and advanced semiconductor materials. Whether you are researching high-frequency operations or looking for updates on III-N material applications, this book provides the technical depth required for modern engineering research.

Key Features

Covers recent research on aggressively-scaled conventional transistors and unconventional high-frequency device concepts within the III-N material system.

Provides detailed discussions on device concepts for mm-wave to THz operation based on deeply-scaled HEMTs.

Explains distributed device designs using plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection.

Includes information on the underlying materials science advancements that enable high-frequency device demonstrations.

A technical resource for engineers and scientists working on advanced electronics and communications engineering.

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