£119.99

Elsevier Nanomaterials-Based Charge Trapping Memory Devices

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Description

As consumer demand for low power consumption electronics increases, the need for scalable and reliable memory devices becomes more urgent. Current methods for scaling memory devices and lowering power consumption face significant obstacles, including short channel effects, Drain Induced Barrier Lowering (DIBL), and sub-surface punch-through effects. These issues contribute to high leakage currents that hinder device efficiency. This book from Elsevier addresses these technical hurdles by exploring the introduction of different memory architectures and materials. Nanomaterials-Based Charge Trapping Memory Devices provides a deep look into how new materials can help overcome existing limitations in semiconductor technology. It is an essential resource for those studying the evolution of memory devices and the transition toward more efficient, low-power electronic components.

Key Features

Addresses the growing demand for low power consumption electronics through advanced memory solutions.

Explores solutions for scaling memory devices to meet modern technological requirements.

Examines technical challenges like short channel effect and Drain Induced Barrier Lowering (DIBL).

Provides insights into managing leakage currents caused by sub-surface punch-through effects.

Investigates the role of different memory architectures and new materials in device development.

Product Specifications

Format
Paperback
Domain
Amazon UK
Release Date
26 June 2020
Listed Since
13 December 2019

Barcode

No barcode data available

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