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CRC Press The MOCVD Challenge GaInAsP-InP/GaAs Book

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Description

The MOCVD Challenge: A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications, Second Edition, provides an essential review of III-V semiconductor compounds. Written by a leading expert in the field, this volume covers GaInAsP-InP, GaInAsP-GaAs, and related materials used in the development of electronic, optoelectronic, and quantum devices. These materials are fundamental to the telecommunications revolution. The book includes a detailed figure on the back cover showing the energy gap and lattice parameter for the full compositional range of binary, ternary, and quaternary combinations of these III-V elements. This text is designed to help readers understand the material properties and learn how to control them for advanced device applications.

Key Features

This second edition covers GaInAsP-InP and GaInAsP-GaAs material for photonic and electronic device applications.

The text examines III-V semiconductor compounds used to create modern optoelectronic and quantum devices.

A detailed figure on the back cover provides the energy gap and lattice parameter for various combinations.

The content includes data for binary, ternary, and quaternary combinations of these III-V elements.

Published by CRC Press as part of the Electronic Materials and Devices Series.

Product Specifications

Format
hardcover
Domain
Amazon UK
Release Date
17 August 2010
Listed Since
10 July 2009

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