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CRC Press Measurement and Modeling of Silicon Heterostructure Devices - CRC Press

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Description

This comprehensive guide reveals the practical techniques and expert methods for measuring and modelling high-speed semiconductor devices, particularly silicon heterostructure components used in modern SiGe applications. Written for engineers and researchers who need reliable data collection strategies and accurate modelling approaches, the book covers the laboratory methods and dexterity required to achieve consistent results with advanced devices. Rather than keeping trade secrets locked away, this resource openly shares the measurement protocols and modelling frameworks that professionals use to characterise semiconductor performance at the highest levels. Whether you are developing new devices, validating existing designs, or troubleshooting performance issues, this text provides the methodological foundation and practical wisdom needed to move beyond basic measurements into truly robust semiconductor characterisation.

Key Features

Silicon heterostructure devices measurement techniques are thoroughly explained with practical laboratory methods for obtaining reliable performance data.

High-speed semiconductor device modelling approaches help engineers create valid models that accurately represent measured device behaviour.

SiGe device characterisation strategies cover the specialised dexterity and protocols required for consistent results with modern heterostructure components.

Published by CRC Press, this technical reference combines measurement fundamentals with advanced modelling practices for electrical engineering professionals.

Product Specifications

Format
hardcover
Domain
Amazon UK
Release Date
13 December 2007
Listed Since
22 June 2007

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