£85.45

World Scientific Publishing Company GaN-Based Materials and Devices

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£85.45 £79.32 £80.66 £82.00 £83.33 £84.67 £86.01 07 June 2026 20 June 2026 03 July 2026 16 July 2026 30 July 2026

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Description

The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.

Product Specifications

Format
hardcover
Domain
Amazon UK
Release Date
12 May 2004
Listed Since
05 February 2007

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