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£111 today · previous high £111 · all-time low £103

Springer Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion (Integrated Circuits and Systems)

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£110.81 £102.52 £104.33 £106.14 £107.94 £109.75 £111.56 11 August 2026 29 August 2026 17 September 2026 05 October 2026 24 October 2026
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Description

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

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