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ÉDITIONS UNIVERSITAIRES EUROPÉENNES CONTRIBUTION A LA MODELISATION DES TBH Si/SiGe EN TEMPERATURE: CONTRIBUTION A LA MODELISATION DES TRANSISTORS BIPOLAIRES A HETEROJONCTION Si/SiGe EN TEMPERATURE (Omn.Univ.Europ.)

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£57.00 £54.15 £55.29 £56.43 £57.57 £58.71 £59.85 26 June 2026 16 July 2026 06 August 2026 27 August 2026 17 September 2026

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Description

La prise en compte de l’effet de la température et en particulier de l’auto-échauffement est un aspect fondamental pour rendre compte de manière précise des caractéristiques électriques des transistors bipolaires à hétérojonction Si/SiGe. L’utilisation de ces composants dans des applications micro-ondes susceptibles d’être exposées à différentes températures et fonctionnant pour des fortes densités de courant accentuent énormément ces effets. Par conséquent, une modélisation précise de ces phénomènes est indispensable. Un modèle dynamique décrivant l’auto-échauffement, caractérisé par une élévation de la température de jonction, a été développé. Une équivalence électrique de ce modèle analytique a été réalisée afin qu’il soit compatible avec des modèles électriques de type SPICE. Un banc de test spécifique pour évaluer le nouveau modèle et extraire ses paramètres a été mis en œuvre. Dans une deuxième partie, la dépendance en température des différents paramètres qui peuvent intervenir dans un modèle électrique compact et en particulier dans le modèle HICUM a été étudiée.

Product Specifications

Format
paperback
Domain
Amazon UK
Release Date
05 July 2010
Listed Since
30 April 2010

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