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VDM Verlag Novel Structural Polycrystalline Silicon Thin Film Transistor: Fabrication and Characterization of Polycrystalline Silicon Thin Film Transistor with Buried Insulator

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Description

This thesis is mainly surveyed the characteristics of polycrystalline silicon thin film transistor (TFT) putting forward and probing into four kinds of novel buried-oxide structures. With these structures, we can improve the shortcoming of the traditional polycrystalline silicon TFT, like leakage current (On/Off state current), subthreshold swing, floating body effect (kink effect), self-heating effect, and short channel effect etc.. Novel buried-oxide polysilicon thin-film transistors (poly-Si TFTs) are proposed and demonstrated to be superior to their conventional counterparts. Furthermore, these novel structures are simple to fabricate, practical, and completely compatible on CMOS technology. Otherwise, the poly-Si TFT with/without NH3 annealing and body implantation, and their corresponding effects, have also been investigated and discussed in depth.

Product Specifications

Format
paperback
Domain
Amazon UK
Release Date
22 September 2011
Listed Since
02 March 2009

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