Ge-based channel MOSFETs: Process Integration and Performance Evaluation for Sub-22nm Node Digital CMOS Logic Technology - Image 1

£51.00

LAP Lambert Academic Publishing Ge-based channel MOSFETs: Process Integration and Performance Evaluation for Sub-22nm Node Digital CMOS Logic Technology

Name: Ge-based channel MOSFETs: Process Integration and Performance Evaluation for Sub-22nm Node Digital CMOS Logic Technology
Brand: LAP Lambert Academic Publishing
Price: 51.0 GBP
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Electronics Engineering

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Description

This work presents research on high mobility channel MOSFET structures (planar and non-planar) using group IV material (mainly SiGe) for enhanced performance and reduced operating power. This work especially focuses on improving the performance of short channel device performance of SiGe channel pMOSFETs which has long been researched yet clearly demonstrated in literature only recently. To reach the goal, novel processing technologies such as millisecond flash source/drain anneal and high pressure hydrogen post-metal anneal are explored. Finally, performance dependence on channel and substrate direction has been analyzed to find the optimal use of these SiGe channels. This work describes an exciting opportunity of weighting the possibility of using high mobility channel MOSFETs for future logic technology.

Product Specifications

Brand: LAP Lambert Academic Publishing
Format: paperback
ASIN: 3846506869
Category: Books > Subjects > Science, Nature & Maths > Engineering & Technology > Electronics & Communications Engineering > Electronics Engineering
Domain: Amazon UK
Release Date: 03 October 2011
Listed Since: 10 October 2011

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LAP Lambert Academic Publishing Ge-based channel MOSFETs: Process Integration and Performance Evaluation for Sub-22nm Node Digital CMOS Logic Technology

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