Study the characteristic of silicon nano-structure prepared by PEC - Image 1

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LAP Lambert Academic Publishing Study the characteristic of silicon nano-structure prepared by PEC

Name: Study the characteristic of silicon nano-structure prepared by PEC
Brand: LAP Lambert Academic Publishing
Price: 51.38 GBP
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Physical Chemistry

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Description

In this work, nanostructures porous silicon (PS) layer is fabricated by (PEC) using 650nm laser diode at different illumination power densities for n-type silicon substrate of resistivity (10Ω.cm) and HF of 48.5% and ethanol(99%)(1:1). The morphological and optical and electrical properties are studied. These characteristics are studied by using our mathematical model which represents the electrical properties. The electrical properties of porous silicon layer are classify according to the structure properties and we prove that the electrical properties depend on the relative permittivity as this classified. See in the low power density the J-v characteristic which appear non rectifying and porous silicon behave as ohmic-contact, high power density of laser which produce rectifying junction, which has behaved as ohmic-contact and high etching time which behaves like (schottky)Junction while at(200mW/cm2) the junction behavior like (hetrojunction) diode.

Product Specifications

Brand: LAP Lambert Academic Publishing
Format: paperback
ASIN: 3659709891
Category: Books > Science, Nature & Maths > Chemistry > Physical Chemistry
Domain: Amazon UK
Release Date: 02 June 2015
Listed Since: 27 June 2015

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LAP Lambert Academic Publishing Study the characteristic of silicon nano-structure prepared by PEC

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