Microstructure, Stress and Defect Evolution: Under Illumination in Hydrogenated Amorphous Silicon (a-Si:H) - Image 1

£65.00

LAP Lambert Academic Publishing Microstructure, Stress and Defect Evolution: Under Illumination in Hydrogenated Amorphous Silicon (a-Si:H)

Name: Microstructure, Stress and Defect Evolution: Under Illumination in Hydrogenated Amorphous Silicon (a-Si:H)
Brand: LAP Lambert Academic Publishing
Price: 65.0 GBP
Availability: InStock

Electronics Engineering

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Description

The purpose of this study is firstly to investigate the relation between microstructure, stress and hydrogen distribution in as deposited hydrogenated amorphous silicon (a-Si:H) layers, and secondly the investigation of the influence of illumination on hydrogen evolution and its relationship with the strain in illuminated layers. A set of a-Si:H layers produced by hot wire chemical vapour deposition, at different temperatures using pure silane, was analyzed using different characterization techniques. UV-Visible absorption spectroscopy was used to investigate the bandgap, refractive index and absorption coefficient. These measurements were also used to determine the film thickness. Hydrogen in the bonded form was investigated using Fourier transform infrared spectroscopy (FTIR), while the total hydrogen was estimated with elastic recoil detection analysis (ERD). Direct diffraction patterns from synchrotron diffraction measurements, and the corresponding pair correlation function, were used to investigate the structure and the strain.

Product Specifications

Brand: LAP Lambert Academic Publishing
Format: paperback
ASIN: 3659644439
Category: Books > Subjects > Science, Nature & Maths > Engineering & Technology > Electronics & Communications Engineering > Electronics Engineering
Domain: Amazon UK
Release Date: 21 August 2018
Listed Since: 14 September 2018

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LAP Lambert Academic Publishing Microstructure, Stress and Defect Evolution: Under Illumination in Hydrogenated Amorphous Silicon (a-Si:H)

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