Technology of Gallium Nitride Crystal Growth: 133 (Springer Series in Materials Science, 133) - Image 1

£139.07

Springer Technology of Gallium Nitride Crystal Growth: 133 (Springer Series in Materials Science, 133)

Name: Technology of Gallium Nitride Crystal Growth: 133 (Springer Series in Materials Science, 133)
Brand: Springer
Price: 139.07 GBP
Availability: InStock

Chemistry

It has never been this cheap. We have no record of a lower price.

£139 today · cheaper than every other day in the last 3 months

NEW HERE?

Amazon shows you one price. We show you all of them.

Tosheroon watches Amazon prices so you don't have to. Every product on Amazon has a price history — we make it visible. Set the price you'd actually pay, and we'll email you the second it gets there. No app, no account, one email.

WHAT'S ON THIS PAGE

↓ Price chart
when this has been cheap or pricey

↓ Forecast
where the price is heading next

↓ Statistics
all-time high & low, recent range

↑ Price alert
name your number, we'll email you

Price History & Forecast

Grey patches = out of stock. Cheaper = lower on the chart. Hover for exact prices.

Last 30 days • 30 data points (No recent data available)

Historical

Generating forecast...

Price Distribution

Price distribution over 30 days • 1 price levels

Days at Price

Price Analysis

Most common price: £139 (30 days, 100.0%)

Price range: £139 - £139

Price levels: 1 different prices over 30 days

Description

Semiconductor materials have been studied intensively since the birth of silicon technology more than 50 years ago. The ability to physically and chemically t- lor their properties with precision is the key factor responsible for the electronic revolution in our society over the past few decades. Semiconductor material s- tems (like silicon and GaAs-related materials) have now matured and found well established applications in electronics, optoelectronics, and several other ?elds. Other materials such as III-Nitrides were developed later, in response to needs that the above mentioned semiconductors were unable to ful?ll. The properties of I- nitrides (AlN, GaN InN, and related alloy systems) make them an excellent choice for ef?cient light emitters in the visible as well as the UV region, UV detectors, and for a variety of electronic device such as high frequency unipolar power devices. There was a major upsurgein the research of the GaN material system around1970.

Product Specifications

Brand: Springer
Format: hardcover
ASIN: 3642048285
Category: Books > Subjects > Science, Nature & Maths > Chemistry
Domain: Amazon UK
Release Date: 24 June 2010
Listed Since: 28 August 2009

Barcode

No barcode data available

Springer Technology of Gallium Nitride Crystal Growth: 133 (Springer Series in Materials Science, 133)

It has never been this cheap. We have no record of a lower price.

Price History & Forecast

Price Distribution

Price Analysis

Description

Product Specifications

Barcode

Similar Products You Might Like

Gallium Nitride: Structure, Thermal Properties and Applications (Chemistry Research and Applications)

Gallium Nitride (GaN): Physics, Devices, and Technology (Devices, Circuits, and Systems)

Iii-nitride Semiconductor Materials

GaN and Related Materials: 2 (Identity in Social Context)

Indium Nitride and Related Alloys

Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications: 124 (Topics in Applied Physics, 124)

GaN and Related Materials II: 7 (Optoelectronic Properties of Semiconductors and Superlattice)

Single Crystals of Electronic Materials: Growth and Properties (Woodhead Publishing Series in Electronic and Optical Materials)

Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications (Woodhead Publishing Series in Electronic and Optical Materials)

GaN and Related Materials: 2 (Gordon and Breach International Series in Engineering, Techn)

Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 ... 1995 (Institute of Physics Conference Series)

Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe

GaAs and Related Materials: Bulk Semiconducting and Superlattice Properties

Processing of Wide Band Gap Semiconductors (Materials Science and Process Technology Series)

Group III-Nitride Semiconductor Optoelectronics

Wide Bandgap Semiconductor Electronics And Devices: 63 (Selected Topics in Electronics and Systems)

III–V Compound Semiconductors: Integration with Silicon-Based Microelectronics

III-Nitride Semiconductors: Optical Properties: 14-15 (Optoelectronic Properties of Semiconductors and Superlattice)

Physics and Properties of Narrow Gap Semiconductors (Microdevices)

Gallium Nitride And Silicon Carbide Power Devices

Nitrides with Nonpolar Surfaces: Growth, Properties, and Devices

GaN and SiC Power Devices: From Fundamentals to Applied Design and Market Analysis (Synthesis Lectures on Engineering, Science, and Technology)

Chemistry of Semiconductors (Royal Society of Chemistry)

Compound Semiconductors 1999: Proceedings of the 26th International Symposium on Compound Semiconductors, 23-26th August 1999, Berlin, Germany: 166 (Institute of Physics Conference Series)