Technology of Gallium Nitride Crystal Growth: 133 (Springer Series in Materials Science, 133) - Image 1

£139.07

Springer Technology of Gallium Nitride Crystal Growth: 133 (Springer Series in Materials Science, 133)

Name: Technology of Gallium Nitride Crystal Growth: 133 (Springer Series in Materials Science, 133)
Brand: Springer
Price: 139.07 GBP
Availability: InStock

Materials Testing

It has never been this cheap. We have no record of a lower price.

£139 today · cheaper than every other day in the last 3 months

NEW HERE?

Amazon shows you one price. We show you all of them.

Tosheroon watches Amazon prices so you don't have to. Every product on Amazon has a price history — we make it visible. Set the price you'd actually pay, and we'll email you the second it gets there. No app, no account, one email.

WHAT'S ON THIS PAGE

↓ Price chart
when this has been cheap or pricey

↓ Forecast
where the price is heading next

↓ Statistics
all-time high & low, recent range

↑ Price alert
name your number, we'll email you

Price History & Forecast

Grey patches = out of stock. Cheaper = lower on the chart. Hover for exact prices.

Last 79 days · 79 data points (no recent data)

Historical

Generating forecast…

Price Distribution

Price distribution over 79 days • 1 price levels

Days at Price

Price Analysis

Most common price: £139 (79 days, 100.0%)

Price range: £139 - £139

Price levels: 1 different prices over 79 days

Description

Semiconductor materials have been studied intensively since the birth of silicon technology more than 50 years ago. The ability to physically and chemically t- lor their properties with precision is the key factor responsible for the electronic revolution in our society over the past few decades. Semiconductor material s- tems (like silicon and GaAs-related materials) have now matured and found well established applications in electronics, optoelectronics, and several other ?elds. Other materials such as III-Nitrides were developed later, in response to needs that the above mentioned semiconductors were unable to ful?ll. The properties of I- nitrides (AlN, GaN InN, and related alloy systems) make them an excellent choice for ef?cient light emitters in the visible as well as the UV region, UV detectors, and for a variety of electronic device such as high frequency unipolar power devices. There was a major upsurgein the research of the GaN material system around1970.

Product Specifications

Brand: Springer
Format: hardcover
ASIN: 3642048285
Category: Books > Subjects > Science, Nature & Maths > Engineering & Technology > Mechanical & Materials Engineering > Materials Testing
Domain: Amazon UK
Release Date: 24 June 2010
Listed Since: 28 August 2009

Barcode

No barcode data available

Springer Technology of Gallium Nitride Crystal Growth: 133 (Springer Series in Materials Science, 133)

It has never been this cheap. We have no record of a lower price.

Price History & Forecast

Price Distribution

Price Analysis

Description

Product Specifications

Barcode

Similar Products You Might Like

Gallium Nitride (GaN): Physics, Devices, and Technology (Devices, Circuits, and Systems)

Iii-nitride Semiconductor Materials

GaN and Related Materials: 2 (Identity in Social Context)

Indium Nitride and Related Alloys

Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications: 124 (Topics in Applied Physics, 124)

GaN and Related Materials II: 7 (Optoelectronic Properties of Semiconductors and Superlattice)

GaN and Related Materials: 2 (Gordon and Breach International Series in Engineering, Techn)

Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 ... 1995 (Institute of Physics Conference Series)

Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe

GaAs and Related Materials: Bulk Semiconducting and Superlattice Properties

Group III-Nitride Semiconductor Optoelectronics

Wide Bandgap Semiconductor Electronics And Devices: 63 (Selected Topics in Electronics and Systems)

III–V Compound Semiconductors: Integration with Silicon-Based Microelectronics

III-Nitride Semiconductors: Optical Properties: 14-15 (Optoelectronic Properties of Semiconductors and Superlattice)

Physics and Properties of Narrow Gap Semiconductors (Microdevices)

Gallium Nitride And Silicon Carbide Power Devices

Nitrides with Nonpolar Surfaces: Growth, Properties, and Devices

GaN and SiC Power Devices: From Fundamentals to Applied Design and Market Analysis (Synthesis Lectures on Engineering, Science, and Technology)

Chemistry of Semiconductors (Royal Society of Chemistry)

Feature Papers in Electronic Materials Section

Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals

Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications

COMPOUND SEMICONDUCTOR BULK MATERIALS AND CHARACTERIZATIONS, VOLUME 2

III-Nitride Semiconductor Optoelectronics: Volume 96 (Semiconductors and Semimetals, Volume 96)