Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications: 124 (Topics in Applied Physics, 124) - Image 1

£120.68

Springer Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications: 124 (Topics in Applied Physics, 124)

Name: Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications: 124 (Topics in Applied Physics, 124)
Brand: Springer
Price: 120.68 GBP
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Mechanics

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Description

This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. Improved theoretical understanding of the behaviour of f-electrons in solids, driven by accelerating computational capability, has coincided with an improved ability of crystal growers to incorporate rare earth elements reproducibly in wide bandgap semiconductor hosts that are favoured for optoelectronic and spintronic applications. The device possibilities of these advanced materials are promising but by no means well-developed. Following a review of the theoretical background, this book explores the preparation of materials, either through in-situ growth or ion implantation/annealing, the characterisation of these materials and their incorporation in existing and prospective devices. Featuring contributions from leading researchers in Europe, the USA and Japan, the book will be a valuable resource for academics, advanced students and industrial scientists. From the Back Cover This book provides a snapshot of recent progress in the field of rare-earth-doped group III-nitride semiconductors, especially GaN, but extending to AlN and the alloys AlGaN, AlInN and InGaN. This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoelectronic and spintronic applications. The text first introduces the reader to the historical background and the major theoretical challenges presented when 4f electron systems are embedded in a semiconductor matrix. It details the preparation of samples for experimental study, either by in-situ growth or ion implantation/annealing, and describes their microscopic structural characterisation. Optical spectroscopy is a dominant theme, complicated by site multiplicity, whether in homogeneous hosts or in heterostructures such as quantum dots, and enlivened by the abiding fascination of the energy transfer mechanism between the host material and the lumophore. Finally, the rapid progress towards prospective optoelectronic and spintronic devices is presented along with several examples.

Product Specifications

Brand: Springer
Format: hardcover
ASIN: 9048128765
Category: Books > Subjects > Science, Nature & Maths > Engineering & Technology > Civil Engineering > Mechanics
Domain: Amazon UK
Release Date: 27 July 2010
Listed Since: 23 April 2009

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Springer Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications: 124 (Topics in Applied Physics, 124)

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