£56.00

VDM Verlag Nouveau procédé de gravure de précision nanométrique en plasmas H2/He

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Description

Pour la réalisation des transistors FDSOI 22 nm et 3D FinFET 10 nm, la gravure de couches ultraminces de quelques nanomètres d’épaisseur doit être réalisée sans endommagement de la couche sous-jacente et n’est plus envisageable avec les procédés reposant sur les plasmas continus à haute densité. Une nouvelle technologie de gravure est étudiée dans cette thèse : elle consiste à modifier la surface d’un matériau sous l’action d’un plasma et à retirer par voie chimique le matériau modifié, sélectivement par rapport au matériau non modifié. Nous nous focalisons ici sur la compréhension de la modification du matériau SiN induite par les plasmas de H2 et He, suivie d’une gravure chimique réalisée en solution de HF. Tout d’abord, un dépôt de conditionnement est développé pour prévenir la dégradation des parois et assurer la reproductibilité du procédé. Des diagnostics en plasmas de H2 et He sont ensuite réalisés pour déterminer la nature des ions, leurs flux et leurs énergies. Enfin la modification du SiN est caractérisée par différentes techniques d'analyse de surface (FTIR, SIMS, TEM).

Product Specifications

Format
paperback
Domain
Amazon UK
Release Date
15 February 2017
Listed Since
11 March 2017

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