Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion (Engineering Materials and Processes) - Image 1

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Springer Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion (Engineering Materials and Processes)

Name: Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion (Engineering Materials and Processes)
Brand: Springer
Price: 107.98 GBP
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Children's Books

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Description

Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.

Product Specifications

Brand: Springer
Format: hardcover
ASIN: 1848820585
Category: Books > Subjects > Children's Books
Domain: Amazon UK
Release Date: 01 December 2008
Listed Since: 01 September 2008

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Springer Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion (Engineering Materials and Processes)

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