Principles & Technology of Modfets V 1 (Design And Measurement in Electronic Engineering) - Image 1

Out of stock

This item is currently unavailable

Wiley-Blackwell Principles & Technology of Modfets V 1 (Design And Measurement in Electronic Engineering)

Name: Principles & Technology of Modfets V 1 (Design And Measurement in Electronic Engineering)
Brand: Wiley-Blackwell

Technical

Gone for 40 days. Could come back at any time — we're watching for you.

Out of stock 40 days · last price £115 · longest previous gap was 1 days

NEW HERE?

Amazon shows you one price. We show you all of them.

Tosheroon watches Amazon prices so you don't have to. Every product on Amazon has a price history — we make it visible. Set the price you'd actually pay, and we'll email you the second it gets there. No app, no account, one email.

WHAT'S ON THIS PAGE

↓ Price chart
when this has been cheap or pricey

↓ Forecast
where the price is heading next

↓ Statistics
all-time high & low, recent range

↑ Price alert
name your number, we'll email you

Price History & Forecast

Grey patches = out of stock. Cheaper = lower on the chart. Hover for exact prices.

Last 61 days · 61 data points (no recent data)

Historical

Generating forecast…

Price Distribution

Price distribution over 61 days • 1 price levels

Days at Price

Price Analysis

Most common price: £115 (61 days, 100.0%)

Price range: £115 - £115

Price levels: 1 different prices over 61 days

Description

Since the invention of the transistor, there has been a great deal of activity and progress in semiconductor technology and understanding, particularly in new heterostructures and superlattices as well as devices based on them. With the development of high quality SiO2 on Si having low interface state densities, MOSFET devices relying on the high mobility two dimensional electron became available in the 1960s and represent the workhorse of integrated circuits today. Two-dimensional electron gas, similar to that in MOSFETs, can also be obtained at GaAs/AlGaAs interfaces which provides even higher mobility, higher velocity and a lattice matched interface. MOSFET-like devices, called MODFETs, have already achieved switching speeds of about 5 Ps at 77K, current gain cut-off frequencies of about 250 GHz and maximum oscillation frequencies of about 400 GHz. In addition to GaAs/AIGaAs on GaAs, the strained system of InGaAs/AIGaAs on GaAs and the InGaAs/InAlAs system on InP substrates have been investigated. In fact, the InP system, at the time of this writing, held the milimeter wave fT current gain cut-off frequency record and yielded extremely low-noise operation, 1dB at 60 Ghz for 0.2 mu gate lengths. In this book, fundamentals, technology and performance of MODFETs, both as microwave and digital devices, are treated in detail. In addition, introductory material particularly that dealing with semiconductor and heterojunction physics, where applicable, is also provided. The book is arranged into two volumes with a total of nine chapters. Volume 1 contains Chapters 1 to 5, and Volume 2 covers Chapters 6 to 9.

Product Specifications

Brand: Wiley-Blackwell
Format: hardcover
ASIN: 0471929204
Category: Books > Subjects > Reference > Writing > Technical
Domain: Amazon UK
Release Date: 29 April 1991
Listed Since: 15 December 2006

Barcode

No barcode data available

Wiley-Blackwell Principles & Technology of Modfets V 1 (Design And Measurement in Electronic Engineering)

Gone for 40 days. Could come back at any time — we're watching for you.

Price History & Forecast

Price Distribution

Price Analysis

Description

Product Specifications

Barcode

Similar Products You Might Like

Nonlinear Design: FETs and HEMTs (Microwave)

Modeling and Characterization of Rf and Microwave Power Fets (The Cambridge RF and Microwave Engineering Series)

FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard

III-Nitride Electronic Devices: Volume 102 (Semiconductors and Semimetals, Volume 102)

High-Speed Heterostructure Devices: From Device Concepts to Circuit Modeling

Modern Semiconductor Device Physics

Frontiers In Electronics: Advanced Modeling Of Nanoscale Electron Devices: 54 (Selected Topics in Electronics and Systems)

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics

Springer Microwave Semiconductor Devices - Engineering Book

Field Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel Technologies

Silicon-Germanium Heterojunction Bipolar Transistors

Silicon-Germanium Heterojunction Bipolar Transistors

Mosfet Modeling For Vlsi Simulation: Theory And Practice: 0 (International Series On Advances In Solid State Electronics And Technology)

Physics of Semiconductor Devices

Recent Advancement in Electronic Devices, Circuit and Materials

Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications (Materials, Devices, and Circuits)

Silicon-Germanium (SiGe) Nanostructures: Production, Properties and Applications in Electronics (Woodhead Publishing Series in Electronic and Optical Materials)

Strain-Engineered MOSFETs

Fundamentals Of Nanotransistors: 6 (Lessons from Nanoscience: A Lecture Notes Series)

MOS Devices for Low-Voltage and Low-Energy Applications (IEEE Press)

Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond

Microwave and RF Smiconductor Control Device Modeling