Wiley Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors: 29 (Wiley Series in Materials for Electronic & Optoelectronic Applications)

The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III−V and II−VI semiconductor alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical, lattice vibronic, electronic, optical and carrier transport properties of such semiconductor alloys. The book reviews not only commonly known alloys (SiGe, AlGaAs, GaInPAs, and ZnCdTe) but also new alloys, such as dilute-carbon alloys (CSiGe, CSiSn, etc.), III−N alloys, dilute-nitride alloys (GaNAs and GaInNAs) and Mg- or Be-based II−VI semiconductor alloys. Finally there is an extensive bibliography included for those who wish to find additional information as well as tabulated values and graphical information on the properties of semiconductor alloys. From the Inside Flap Semiconductor alloys provide a natural means of tuning the magnitude of the band-gap energy and other material properties so as to optimize and widen the application of semiconductor devices. Current research and development on these alloys is focused on areas of improved materials growth and development of unique materials characterization and suitable process technologies. Such materials have already found application in various electronic and optoelectronic devices such as photodiodes and semiconductor lasers. The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III - V and II - VI semiconductor alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical, lattice vibronic, electronic optical, and carrier transport properties of such semiconductor alloys. The book reviews not only commonly known alloys (SiGe and ZnCdTe) but also new alloys, such as dilute-carbon alloys (CSiGe and CSiSn), III - N alloys, dilute-nitride alloys (GaNAs and GaInNAs) and Mg- or Be-based II-VI semiconductor alloys. Finally there is an extensive bibliography included for those who wish to find additional information as well as tabulated values and graphical information on the properties of semiconductor alloys. Written by a recognized expert and experienced author in the field, this book will appeal to semiconductor materials and device engineers and also solid-state/condensed matter physicists and materials scientists as well as graduate students, R&D staff and researchers in academia. From the Back Cover Semiconductor alloys provide a natural means of tuning the magnitude of the band-gap energy and other material properties so as to optimize and widen the application of semiconductor devices. Current research and development on these alloys is focused on areas of improved materials growth and development of unique materials characterization and suitable process technologies. Such materials have already found application in various electronic and optoelectronic devices such as photodiodes and semiconductor lasers. The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III - V and II - VI semiconductor alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical, lattice vibronic, electronic optical, and carrier transport properties of such semiconductor alloys. The book reviews not only commonly known alloys (SiGe and ZnCdTe) but also new alloys, such as dilute-carbon alloys (CSiGe and CSiSn), III - N alloys, dilute-nitride alloys (GaNAs and GaInNAs) and Mg- or Be-based II-VI semiconductor alloys. Finally there is an extensive bibliography included for those who wish to find additional information as well as tabulated values and graphical information on the properties of semiconductor alloys. Written by a recognized expert and experienced author in the field, this book will appeal to semiconductor ma