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CRC Press Nitride Wide Bandgap Semiconductor Material and Electronic Devices

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Description

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits. About the Author Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.

Product Specifications

Format
paperback
Domain
Amazon UK
Release Date
30 June 2020
Listed Since
29 May 2020

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