Elsevier Metal Oxides for Non-volatile Memory: Materials, Technology and Applications

Product Description Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. Review One-stop reference on the metal oxides materials system, with discussions of its properties, design and fabrication considerations for nonvolatile memory technologies From the Back Cover <p><i>Metal Oxides for Non-volatile Memory: Materials, Technology and Applications</i> covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory.</p> <p>Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems.</p> About the Author Panagiotis Dimitrakis is a Senior Researcher, Cleanroom Facility Manager in the Institute of Nanoscience and Nanotechnology, Greece. Ilia Valov is a Senior Scientist at the Peter Gruenberg Institute, Electronic Materials (IEM), Julich, Germany. Prof. Dr. Stefan Tappertzhofen studied electrical engineering and information technology at RWTH Aachen University and received his PhD in 2014. From 2014 – 2016 he worked as research associate at the Department of Engineering, University of Cambridge. Afterwards, he worked as a research and development manager for semiconductor measurement technology at aixACCT Systems. Since 2020 he is Professor in Micro- and Nanoelectronics at TU Dortmund University. His research is focused on novel multi-functional materials, memristive systems and circuits, and quantum- and nanotechnology. Ghenadii Korotcenkov received his Ph.D. in Physics and Technology of Semiconductor Materials and Devices in 1976, and his Doctor Habilitate Degree in Physics and Mathematics of Semiconductors and Dielectrics in 1990. Long time he was a leader of scientific Gas Sensor Group and manager of various national and international scientific and engineering projects carried out in Laboratory of Micro- and Optoelectronics, Technical University of Moldova, supported from International Foundations and Programs such as CRDF, MRDA, IREX, ICTP, INTAS, INCO-COPERNICUS, COST, NATO. From 2007 to 2008, he was an invited scientist in Korean Institute of Energy Research, Daejeon, South Korea. Then, until the end of 2017 Dr. G. Korotcenkov was a research professor at the School of Materials Science and Engineering at Gwangju Institute of Science and Technology, Gwangju, South Korea. Currently Dr. G. Korotcenkov is the research professor at the Department of Physics and Engineering at the Moldova State Univer