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Springer Fowler-Nordheim Field Emission in Semiconductor Nanostructures

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Description

This comprehensive monograph examines Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures in depth. The text covers quantum-confined non-linear optical materials, III-V and II-VI semiconductors, germanium, tellurium, carbon nanotubes, PtSb2, stressed materials, bismuth, gallium phosphide, gallium antimonide, bismuth telluride, and HgTe/CdTe superlattices with graded interfaces. The volume explores effective mass superlattices under magnetic quantisation, quantum wires, and field emission behaviour in opto-electronic materials and their quantum-confined variants under light exposure. Published by Springer as part of their Solid-State Sciences series (volume 170), this monograph provides specialist knowledge for researchers and advanced students studying semiconductor physics and nanostructure electronics.

Key Features

Fowler-Nordheim field emission from III-V and II-VI semiconductor materials and their nanostructures with detailed theoretical treatment.

Coverage of quantum-confined semiconductors including carbon nanotubes, bismuth compounds, and superlattices with graded interfaces.

Analysis of field emission behaviour in opto-electronic materials under light exposure and magnetic quantisation conditions.

Part of Springer Series in Solid-State Sciences volume 170, providing peer-reviewed research for semiconductor physics specialists.

Product Specifications

Format
hardcover
Domain
Amazon UK
Release Date
13 January 2012
Listed Since
21 March 2011

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