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£119.95
Springer Compound Semiconductors Strained Layers and Devices 7
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Description
Key Features
Covers the historical development of strained-layer devices following the initial growth of pseudomorphic GeSi strained layers on Si.
Details the technical breakthroughs in growth and doping technology for strained layers that occurred between 1989 and 1999.
Provides insight into the fabrication of new devices made possible by the accumulation of new materials and strain-enhanced performance.
Explains the role of strain layer epitaxy in accessing the short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) spectrum regions.
Part of the Electronic Materials Series (Volume 7) from the established publisher Springer.
Product Specifications
- Brand
- Springer
- Format
- hardcover
- ASIN
- 0792377699
- Domain
- Amazon UK
- Release Date
- 31 March 2000
- Listed Since
- 15 December 2006
Barcode
No barcode data available
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