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Springer Compound Semiconductors Strained Layers and Devices - Springer

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Description

This comprehensive volume from Springer's Electronic Materials Series explores the evolution of compound semiconductors and strained-layer technology over 25 years. Beginning with the groundbreaking development of pseudomorphic GeSi strained layers on silicon by Erich Kasper, the book documents the steady accumulation of advanced materials and devices that leverage strain for enhanced performance. The 1989-1999 period witnessed major breakthroughs in growth and doping technology, enabling the fabrication of novel devices previously impossible to create. The text addresses critical spectral regions, from short wavelength violet and green light to mid-infrared wavelengths between 2 and 5 micrometers, unlocking new possibilities for optoelectronic and semiconductor applications. Essential reading for materials scientists, engineers, and researchers working with advanced semiconductor technologies and epitaxial growth.

Key Features

Part of Springer's Electronic Materials Series, volume 7, providing authoritative coverage of compound semiconductor research and development.

Documents 25 years of strained-layer technology evolution, from the initial pseudomorphic GeSi development through major breakthroughs in growth and doping.

Covers wavelength regions from violet and green light through mid-infrared spectrum (2-5 micrometers) previously inaccessible before strain-layer epitaxy.

Details the devices and enhanced-performance materials enabled by strain-engineering techniques in semiconductor physics and applications.

Product Specifications

Format
hardcover
Domain
Amazon UK
Release Date
31 March 2000
Listed Since
15 December 2006

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