£119.95

Springer Compound Semiconductors Strained Layers and Devices 7

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Description

Explore the evolution of semiconductor technology with Compound Semiconductors Strained Layers and Devices, part of the Electronic Materials Series. This volume covers the significant advancements made in the field following the growth of the first pseudomorphic GeSi strained layers on Si. Readers will examine the steady accumulation of new materials and devices that have achieved enhanced performance through the use of strain. The text covers the productive period between 1989 and 1999, a time when several breakthroughs occurred in the growth and doping technology of strained layers. This book details how these technological breakthroughs led to the fabrication of new devices. It specifically addresses how strain layer epitaxy helped bridge the gap in the short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum, which were previously limited. This is a technical resource for understanding the development of high-performance semiconductor materials and the devices that utilize them.

Key Features

Covers the historical development of strained-layer devices following the initial growth of pseudomorphic GeSi strained layers on Si.

Details the technical breakthroughs in growth and doping technology for strained layers that occurred between 1989 and 1999.

Provides insight into the fabrication of new devices made possible by the accumulation of new materials and strain-enhanced performance.

Explains the role of strain layer epitaxy in accessing the short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) spectrum regions.

Part of the Electronic Materials Series (Volume 7) from the established publisher Springer.

Product Specifications

Format
hardcover
Domain
Amazon UK
Release Date
31 March 2000
Listed Since
15 December 2006

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