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Academic Press Ion-Implanted Semiconductors Disorder & Defects Analysis

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Description

This comprehensive volume explores the electrical and physicochemical characterisation of ion-implanted semiconductors, examining how disorder and defects affect material behaviour and device performance. Part of the prestigious Semiconductors and Semimetals series, this Academic Press publication provides in-depth analysis of ion implantation effects, defect characterisation techniques, and the relationship between structural damage and electrical properties. Essential for materials scientists, semiconductor engineers, and researchers studying advanced semiconductor fabrication, this technical reference covers both theoretical foundations and practical applications in modern electronics manufacturing and device development.

Key Features

Academic Press publication offering authoritative coverage of ion implantation effects on semiconductor materials and electrical characteristics.

Volume 45 in the Semiconductors and Semimetals series, part of a respected scientific reference collection on semiconductor physics and engineering.

Detailed examination of disorder and defects in ion-implanted semiconductors with focus on physicochemical characterisation methods.

Addresses the relationship between ion implantation-induced damage and resulting electrical properties in semiconductor devices.

Technical resource for materials scientists and semiconductor researchers studying advanced fabrication and characterisation techniques.

Product Specifications

Format
paperback
Domain
Amazon UK
Release Date
24 August 2011
Listed Since
18 October 2011

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