Taylor & Francis Light-Induced Defects in Semiconductors

This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications. Review "This book is an illuminating review covering some 40 years of active research in the physics of defects in semiconductors, as well as a concentrate of the most recent progress in the field. The authors, who are themselves important contributors in the domain of light-induced defects, present a clear and well-documented review, including spin-dependant effects and a profound analysis of the properties of amorphous semiconductors." Prof. Ionel Solomon, Laboratoire de Physique de la Matière Condensée, France "There is no book that attempts to explain the light-induced defect creations in both crystalline and disordered semiconductors. I am convinced that the present book provides a valuable source of information and resource for MSc and PhD students and researchers with specialization in condensed matter physics, physical chemistry, and related engineering fields." Prof. Koichi Shimakawa, Gifu University, Japan "The authors’ scientific contributions to this field are extremely high. This book introduces students of physics and materials science as well as senior research workers to light-induced defects in semiconductors. An excellent reference source of the topic can be found at the end of the book." Prof. Sandor Kugler, Budapest University of Technology and Economics, Hungary "This book presents an extensive review of photo-induced electronic properties of both crystalline and non-crystalline bulk semiconductors. It is a valuable source of reference for graduate students and all researchers in the fields of condensed matter physics, industrial physics, and materials science and engineering." Prof. Jai Singh, Charles Darwin University, Australia About the Author Kazuo Morigaki is professor emeritus at the University of Tokyo, Japan. He received his PhD in physics from Osaka University, Japan, in 1959. His current areas of interest are light-induced phenomena and electronic states of defects in amorphous and microcrystalline silicon. Harumi Hikita is professor at the Physics Laboratory, Mekai University, Japan. He received his PhD in physics from Tokai University, Japan, in 1993. His current interests focus on light-induced phenomena and hydrogen motion in hydrogenated amorphous silicon. Chisato Ogihara is associate professor at the Department of Applied Physics, Yamaguchi University, Japan. He received his PhD in physics from University of Tokyo, Japan, in 1988. His current research focuses on photoluminescence and light-induced creation of defects in hydrogenated amorphous silicon.